Breaking News: Samsung’s 1.4nm Process Revealed!

In the words of Jeong Gi-Tae, vice president of Samsung Foundry, the organization planned to increase the number of nanosheets from three to four through the development of its SF(1.4nm-class) 1.4nm process technology, as according to the DigiTimes

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Samsung, with its SF3E (also known as 3nm-class gate-all-around ear, 3GAE) in mid-2022, was the first company to introduce a process technology based on gate-all-around (GAA) nanosheet transistors.

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Advantages of 1.4nm Process

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Samsung intends to launch its SF3 technology, which is expected to find use in a greater number of applications, next year

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Samsung’s performance-enhanced SF3P technology, which was created with data center CPUs and GPUs in mind, will be made available in 2025

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This process will utilize backside power supply in addition to GAA transistors, which offers significant advantages in terms of transistor density and power delivery

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Benefits of Samsung’s 1.4nm Process

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After the release of GAA-based SF3E, Samsung manufacturing nodes will likely undergo their largest redesign in 2027 when their SF1.4 technology adds a fourth nanosheet, bringing the total number of nanosheets to four

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GAA transistors will be used by both Intel and TSMC with their 20A and N2 (2nm-class) process technologies, which are expected to be released in 2024 and 2025, respectively For more details Govindhtech.com

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