MnBi6Te10
Researchers discovered the world’s thinnest semiconductor junction (3.3 nm) naturally forming in the quantum material MnBi₆Te₁₀
This junction is 25,000 times thinner than paper and forms spontaneously within the crystal structure, not by design
The finding could lead to ultra-small, energy-efficient electronics and advances in quantum technology
MnBi₆Te₁₀ is a topological material known for edge conduction without resistance, making it promising for quantum and electronic devices
The research was conducted by teams at Pennsylvania State University and the University of Chicago Pritzker School of Molecular Engineering
The junctions form due to uneven electron distribution, caused by antimony and manganese atoms swapping places in the lattice
Time- and angle-resolved photoemission spectroscopy (trARPES) revealed the charge redistribution and internal electric fields
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