Samsung Electronics has revealed that it has created HBM3E 12H DRAM , the first 12-stack HBM3E DRAM in the industry and the largest HBM product to date
The industry-leading 36 gigabytes (GB) of capacity and an unprecedented 1,280 gigabytes per second (GB/s) of bandwidth are offered by Samsung’s HBM3E 12H DRAM
Samsung’s HBM3E 12H DRAM delivers the biggest capacity HBM in the industry, increasing both performance and capacity by more than 50%
HBM3E 12H DRAM product meets the industry’s AI service providers’ growing need for HBM with increased capacity
Samsung’s cutting-edge TC NCF makes it possible to use bumps of different sizes between the chips, which enhances the HBM’s thermal characteristics
HBM3E 12H DRAM to be the best option as AI applications continue to increase at an exponential rate
Highest-capacity HBM product available at this time: provides 36GB of storage, which is more than 50% more than the 8-stack model