Innovative Future: Samsung 3D DRAM

This article examines Samsung’s 3D DRAM technology, its cutting-edge attributes, and its expected influence on computing in the future

Samsung Electronics intends to provide the newest technology that will enable the markets to advance into the future as it joins the emerging 3D DRAM industry

Samsung plans to launch two new techniques, dubbed Vertical Channel Transistors and Stacked DRAM

These techniques involve different component placements, which ultimately result in lower device area occupation and higher performance

This will enable the company to get a greater storage-to-area ratio and eventually raise chip capacities to 100 GB

Samsung seems to be ahead of the curve in development, indicating it will dominate the DRAM industry

Multiple layers of memory cells are vertically stacked inside a single chip using the stacked DRAM technology