Global memory and storage leader Micron Technology has begun mass manufacture of High Bandwidth Memory 3E (HBM3E) devices
Micron HBM3E Memory uses 30% less power than rival HBM3E Memory chips, lowering data center running expenses
AI accelerators, supercomputers, and data centers can access data at lightning-fast rates thanks to Micron’s HBM3E Memory
HBM3E Memory provides the highest throughput at the lowest power consumption to optimize data center operating cost parameters as AI demand rises.
Since the need for AI keeps growing, memory solutions become more and more important
Micron’s method provides the necessary memory capacity to expedite large-scale neural network training as well as inferencing tasks
Micron developed the industry-leading HBM3E architecture with unique packaging with 1-beta technology, improved through-silicon via (TSV), and other enhancements.
The firm provides customers with cutting-edge technology, top-notch operations and production, and meticulous service