New 4D NAND Flash Memory from SK Hynix

SK Hynix introduced 300-layer NAND flash memory. After introducing its first 96-layer solution in 2018, SK hynix’s 321-layer 1 Tb TLC 4D NAND smashed records again

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This Tech Pathfinder episode introduces 4D NAND from SK Hynix. 4D stacking innovations such Cost-Effective 3-Plug arrangement, Sideway Source, All Peri

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To understand 4D NAND technology, master its basics and language The smallest data storage unit is cells. NAND flash memory has floating and control gates

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The number of bits per cell classifies 4D NAND flash memory These include 1-bit, 2-bit, 3-bit, 4-bit, and 5-bit cells. Giga and tera are NAND flash memory capacities

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In order to create a NAND flash product with over 300 layers, stack 100 layers and plug etch three times SK hynix’s Cost-Effective 3-Plug formation allows simultaneous cell production on all layers

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SK hynix has optimized its horizontal pathway connections to prevent bottom voids since debuting 4D NAND in 2018 This improved 238-layer NAND flash memory production efficiency by 34% over the 176-layer product

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All firm PUC technology shrinks the peri to match the cell or fit smaller cells. To improve technology, SK Hynix is miniaturizing the peri. by reducing transistor size and number and moving it under the cell

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In this last Tech Pathfinder episode, SK hynix demonstrated how 4D NAND can solve industry issues now and in the future For more details govindhtech.com

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