Samsung Makes a Major Investment in Next-Gen Memory Technologies, Including HBM3E, GDDR7, LPDDR5x, CAMM2, and More
“Shinebolt” Samsung HBM3E Memory For AI & Data Centres
The HBM3E can transfer data at rates greater than 1.2 terabytes per second (TBps) thanks to its remarkable 9.8 gigabits per second (Gbps) per pin performance
Samsung has optimised its non-conductive film (NCF) technology to remove gaps between chip layers and maximise thermal conductivity in order to enable higher-layer stacks and improve thermal characteristics
Next-Generation Gaming Graphics With 32 Gbps & 32 Gb DRAM From Samsung
Samsung LPDDR5x Reduces Mobile Designs and Next-Gen CAMM2 Modules
GPU Memory Technology Updates
For more details please visit our home page Govindhtech.com